Carrier Concentration and Energy Level Concepts in Semiconductors
1. If N_D = 1 × 10^16 cm⁻³ and T = 300 K, assuming full ionization in the extrinsic region, the electron concentration n is approximately:
2. If n = 5 × 10^15 cm⁻³ and n_i = 1.5 × 10^10 cm⁻³ at 300 K, calculate the hole concentration p.
3. If the bandgap E_g = 1.1 eV, at which temperature will intrinsic carriers dominate approximately?
4. In simulations, as temperature increases from 100 K to 400 K, the Fermi level for an n-type semiconductor is observed to:
5. If temperature rises but doping concentration remains fixed, what happens to n and p in an intrinsic transition?
6. A simulated band diagram shows E_F shifting downward with increasing T for a p-type semiconductor. This means:
7. If a heavily doped n-type sample shows almost no change in electron concentration even at 500 K, the reason is:
8. When quasi-Fermi levels split significantly under optical excitation, this indicates:
9. In a simulation, a semiconductor shows np = 2 × 10^20 cm⁻⁶ at 350 K. If n_i = 1 × 10^10 cm⁻³, what does this imply?